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YJJ S4111-35Q Silicon Photodiode Array is Used in The Ultraviolet to Near-infrared Band

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YJJ S4111-35Q Silicon Photodiode Array is Used in The Ultraviolet to Near-infrared Band

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Brand Name : HAMAMATSU

Model Number : S4111-35Q

Place of Origin : Japan

MOQ : 1

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 500

Delivery Time : 5-8 days

Packaging Details : Plate serving

Pixel size : 0.9 × 4.4mm

Pixel count : 35

Packaging : Ceramic

Package category : 40-pin DIP

Scintillator type : None

Reverse voltage : 15V

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Product Description:

S4111-35Q Silicon Photodiode Array is Used in The Ultraviolet to Near-infrared Band

Features:

A 35-pixel silicon photodiode array suitable for the ultraviolet to near-infrared band

S4111-35Q is a linear array of silicon photodiodes installed in a ceramic DIP (dual in-line package). This photodiode array is mainly used for weak light measurement such as spectrophotometry, covering a wide spectral range from ultraviolet light to near-infrared light. Since all pixels can adopt the reverse bias of the charge storage reading, the S4111-35Q can detect low light with high sensitivity. Minimize crosstalk between pixels to maintain signal purity. It can be used as a light-receiving window to connect special filters (customized products).

Characteristics

- Highly exposed surface

Low crosstalk

Stronger near-infrared sensitivity

Low dark current

Pixel size (each pixel) : 0.9 × 4.4mm

Pixel count: 35

Encapsulation ceramics

Package category: 40-pin DIP

There is no scintillator type

Refrigerated non-cooled type

Reverse voltage (maximum value) 15 V

The sensitivity wavelength range is 190 to 1100 nm

The maximum sensitivity wavelength (typical value) is 960 nm

Photosensitive sensitivity (typical value) : 0.58 A/W

Dark current (maximum value) 10 pA

Rise time (typical value) 1.2 μs

Junction capacitance (typical value) 550 pF

The typical value of the measurement condition Ta = 25°C, unless otherwise specified

For each pixel, photosensitive sensitivity: λ = 960 nm, dark current: VR=10 mV, rise time: VR= 0 V, junction capacitance: VR= 0 V

Shenzhen Yijiajie Electronic Technology Co., Ltd. mainly serves OEM manufacturers in the sales of sensor products. In the field of sensing and control products, we provide product sales and technical support services in China for globally renowned manufacturers. We are also currently a professional supplier of sensing and control products in China and Hong Kong. The head office was founded in Hong Kong in 2002. The Shenzhen company is located at the intersection of Shennan Middle Road and Huaqiang North Road in Shenzhen. Meanwhile, the company has a large amount of spot inventory in Shenzhen and Hong Kong and can place orders directly from abroad with prompt delivery. We hope to cooperate with domestic related manufacturers to provide your company with high-quality and satisfactory products and make your products more competitive. We sincerely look forward to cooperating with you.

Specifications:

Maximum sensitivity wavelength 960 nm
Photosensitive sensitivity 0.58 A/W
Dark current 10 pA
Rise time 1.2 μs

YJJ S4111-35Q Silicon Photodiode Array is Used in The Ultraviolet to Near-infrared Band


Product Tags:

Near-infrared Silicon Photodiode Array

      

YJJ S4111-35Q Silicon Photodiode Array

      

Ultraviolet Silicon Photodiode Array

      
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